- 您现在的位置：买卖IC网 > Sheet目录539 > ZXM62P03E6TA (Diodes Inc)MOSFET P-CH 30V 2.6A SOT-23-6
ZXM62P03E6
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GS
Value
-30
±20
Units
V
V
Continuous Drain Current
V GS = -4.5V
T A = +25°C (Note 5)
T A = +70°C (Note 5)
I D
-1.5
-1.2
A
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
I DM
I S
I SM
-7.4
-0.54
-7.4
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
T J, T STG
Value
625
5
806
6.4
113
73
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1
±100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -30V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-1
?
1.1
?
?
?
?
?
?
?
19.9
13
?
0.15
0.23
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -1.6A
V GS = -4.5V, I D = -0.8A
V DS = -10V, I D = -0.8A
T J = +25°C, I S = -1.6A, V GS = 0V
T J = +25°C, I F = -1.6A,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
330
120
45
2.8
6.4
13.9
10.3
?
?
?
?
?
?
?
?
?
?
10.2
1.5
3
pF
ns
nC
V DS = -25V, V GS = 0V
f = 1.0MHz
V DD = -15V, I D = -1.6A,
R G ? 6.2 ? ?? R D ? 25 ? ??
V DS = -24V, V GS = -10V,
I D = -1.6A
Notes:
8. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXM62P03E6
Document Number: DS33483 Rev. 2 - 2
2 of 7
www.diodes.com
December 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ZXM64N02XTC
MOSFET N-CHAN 20V MSOP8
ZXM64N035L3
MOSFET N-CH 35V 13A TO-220-3
ZXM64P02XTC
MOSFET P-CHAN 20V MSOP8
ZXM64P035L3
MOSFET P-CH 35V 12A TO-220-3
ZXM64P03XTC
MOSFET P-CHAN 30V MSOP8
ZXM66P02N8TC
MOSFET P-CHAN 20V 8SOIC
ZXM66P03N8TA
MOSFET P-CH 30V 7.9A 8-SOIC
ZXMC10A816N8TC
MOSFET DUAL COMPL 100V 8-SOIC
相关代理商/技术参数
ZXM62P03E6TC
功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P03G
制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03GTA
功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P03GTC
制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM63C02
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V Dual N and P-Channel Enhancement Mode Mosfet
ZXM63N02E6TA
功能描述:MOSFET N-CH 20V 3.2A SOT-23-6 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ZXM63N03NXTA
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM63N03NXTC
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET